NPN Transistor - ON Semiconductor
Description
BCP56 Series
NPN Silicon Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications.
The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
Features
• High Current: 1.
0 A • The SOT−223 package can be soldered using wave or reflow.
The
formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel Use BCP56T3G to Order the 13 inch/4000 Unit Reel
• PNP Complement is BCP53T1G • S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Collector Current − Peak (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C
VCEO VCBO VEBO
IC ICM PD
80
Vdc
100
Vdc
5
Vdc
1
Adc
2
Adc
1.
5
W
12
mW/°C
Operating and Storage Temperature Range
TJ, Tstg − 65 to 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient (surface mounted)
RqJA
83.
3
°C/W
Maximum Temperature for Soldering Purposes Time in Solder Bath
TL
260
°C
10
Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Reference SOA curve.
2.
Device mounted on a FR−4 glass epoxy printed circuit board 1.
575 in x
1.
575 in x 0.
0625 in; mounting pad for the collector lead = 0.
93 sq in.
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MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE 1
EMITTER 3
4
123
SOT−223 CASE 318E
STY...
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