IXTH340N04T4 Datasheet

IXTH340N04T4 Power MOSFET

TrenchT4TM Power MOSFET Preliminary Technical Information IXTP340N04T4 IXTH340N04T4 VDSS = ID25 = RDS(on)  40V 340A 1.9m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-220AB (IXTP) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS IA EAS PD TJ TJM Tstg TL TSOLD Md Weight .

Features

 International Standard Packages
 175°C Operating Temperature
 High Current Handling Capability
 Avalanche Rated
 Fast Intrinsic Rectifier
 Low RDS(on) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 100A, Notes 1, 2 Characteristic Values Min. Typ. Max. 40 V 2.0 4.0 V             200 nA 5 A 750 A 1.9 m Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 DC-DC Conve.