Power MOSFET - IXYS
Description
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH300N04T2
VDSS = ID25 =
RDS(on) ≤
40V 300A 2.
5mΩ
TO-247
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg TL Tsold
M d
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting torque
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
40
V
40
V
± 20
V
300
A
160
A
900
A
100
A
600
mJ
480
W
-55 .
.
.
+175
°C
175
°C
-55 .
.
.
+175
°C
300
°C
260
°C
1.
13 / 10
Nm/lb.
in.
6
g
Characteristic Values Min.
Typ.
Max.
40
V
2.
0
4.
0 V
±200 nA
5 μA 150 μA
2.
5 mΩ
G DS
(TAB)
G = Gate
D = Drain
S = Source TAB = Drain
Features
z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on)
Advantages
z Easy to mount z Space savings z High power density
Applications
• Synchronous Buck Converters • High Current Switching Power
Supplies
• Battery Powered Electric Motors • Resonant-mode power supplies • Electronics Ballast Application • Class D Audio Amplifiers
© 2008 IXYS CORPORATION, All rights reserved
DS100079(11/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.
5 • VDSS, ID = 100A RG = 2Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25
RthJC RthCH
Characteristic Values Min.
Typ.
Max.
55
94
S
10.
7
nF
1630
pF
263
pF
22
ns
17
ns
32
ns
13
ns
145
nC
44
nC
36
...
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