N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.
5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
300
A
IDM
Drain Current-Single Pulsed
900
A
PD
Total Dissipation @TC=25℃
480
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
Rth(j-c) Junction-to-case thermal resistance 0.
313
UNIT ℃/W
IXTH300N04T2
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
IXTH300N04T2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
40
V
VGS(th) Gate Threshold Voltage
VDS=VGS; ID = 250μA
2.
0
4.
0
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 150A
2.
5
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
±200
nA
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃
IF= 100A; VGS = 0V
5 μA
150
1.
3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these spe...
Similar Datasheet
