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IXTH130N15T

IXYS
Part Number IXTH130N15T
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ1...
Datasheet PDF File IXTH130N15T PDF File

IXTH130N15T
IXTH130N15T

Overview
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) ≤ 150 130 12 V A mΩ TO-247 (IXTH) Symbol VDSS V DGR V GSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.
5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 150 V 150 V ± 30 V 130 A 75 A 330 A 5 A 1.
2 J ...


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