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TK75J04K3Z

INCHANGE
Part Number TK75J04K3Z
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description iscN-Channel MOSFET Transistor TK75J04K3Z ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3mΩ (MAX) ·Enhancement ...
Datasheet PDF File TK75J04K3Z PDF File

TK75J04K3Z
TK75J04K3Z

Overview
iscN-Channel MOSFET Transistor TK75J04K3Z ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3mΩ (MAX) ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER ...


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