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FFSB10120A

ON Semiconductor
Part Number FFSB10120A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published Nov 8, 2020
Detailed Description FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completel...
Datasheet PDF File FFSB10120A PDF File

FFSB10120A
FFSB10120A

Overview
FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 100 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Parallel...


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