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IXTA110N055P

Part Number	IXTA110N055P
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 6, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Fully characterized aval...
Datasheet	IXTA110N055P PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.
5mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pulsed 250 A PD Total Dissipation @TC=25℃ 330 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMA...

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