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IXTA110N12T2

INCHANGE
Part Number IXTA110N12T2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 6, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characteriz...
Datasheet PDF File IXTA110N12T2 PDF File

IXTA110N12T2
IXTA110N12T2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 517 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMB...


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