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IXTA70N085T

INCHANGE
Part Number IXTA70N085T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 6, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully character...
Datasheet PDF File IXTA70N085T PDF File

IXTA70N085T
IXTA70N085T

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.
5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 85 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 70 IDM Drain Current-Single Pulsed 190 PD Total Dissipation @TC=25℃ 176 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL ...


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