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IXFA130N10T2

Part Number	IXFA130N10T2
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 2, 2020
Detailed Description	isc N-Channel MOSFET Transistor IXFA130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fu...
Datasheet	IXFA130N10T2 PDF File

Overview

isc N-Channel MOSFET Transistor IXFA130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.
1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 360 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERI...

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