N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
IRF3711S
·DESCRIPTION ·Static drain-source on-resistance:
RDS(on) ≤6mΩ@VGS= 10V ·Drain Source Voltage
: VDSS= 20V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
.
·High Frequency Synchronous Buck Converters for Computer Processor Power.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
20
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous
110
A
ID(puls)
Pulse Drain Current
440
A
Ptot
Total Dissipation
120
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.
04 ℃/W
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isc N-Channel MOSFET Transistor
IRF3711S
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
20
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
1.
0
3.
0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=15A
6
mΩ
IGSS
Gate-Body Leakage Current
VGS= ±16V;VDS= 0
±200 nA
IDSS
Zero Gate Voltage Drain Current
VDS= 16V; VGS= 0;Tj =25℃ VDS= 16V; VGS= 0;Tj =125℃
20 µA
100
VSD
Diode Forward On-Voltage
IS= 30A ;VGS= 0
1.
3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special appl...
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