N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
79
IDM
Drain Current-Single Pulsed
316
PD
Total Dissipation @TC=25℃
41
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.
7
UNIT ℃/W
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isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=0.
27mA
100
V
2.
0
3.
5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=79A
IGSS
Gate-Source Leakage Current
VGS= 20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=100V; VGS= 0V
VSD
Diode forward voltage
IDR =79A, VGS = 0 V
3
mΩ
100
nA
1
μA
1.
2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or ...
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