Ultrafast Rectifier - INCHANGE
Description
Ultrafast Rectifier
INCHANGE Semiconductor
HFA32PA120C
FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Rectifier in switch mode supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
PD
Maximum power dissipation
VALUE UNIT
1200
V
32
A
190
A
151
W
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
Ultrafast Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
HFA32PA120C
MAX 0.
83
UNIT ℃/W
ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage
IF= 16A ;Tj=25℃ IF= 16A ;Tj=125℃
3.
0 2.
7
IR
Maximum Instantaneous Reverse Current
VR= VRRM ;Tj=25℃ VR= 0.
8VRRM ;Tj=125℃
20 2
trr
Maximum Reverse Recovery Time
IF =1A;dIF/dt = 200 A/µs, VR = 30 V
60
UNIT
V µA mA ns
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please conta...
Similar Datasheet
