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FCH040N65S3

INCHANGE
Part Number FCH040N65S3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 24, 2020
Detailed Description isc N-Channel MOSFET Transistor FCH040N65S3 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 650V ·Sta...
Datasheet PDF File FCH040N65S3 PDF File

FCH040N65S3
FCH040N65S3

Overview
isc N-Channel MOSFET Transistor FCH040N65S3 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 650V ·Static drain-source on-resistance: RDS(on) ≤ 99mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 30 A IDM Drain Current-Single Pulsed 75 A PD Total Dissipation 227 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS...


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