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2SC4891

INCHANGE
Part Number 2SC4891
Manufacturer INCHANGE
Description NPN Transistor
Published Oct 19, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High reliability ·High Breakdown Voltage- : V(BR)CB...
Datasheet PDF File 2SC4891 PDF File

2SC4891
2SC4891


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High reliability ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 35 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4891 isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; I...



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