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2SB1151

Part Number	2SB1151
Manufacturer	INCHANGE
Description	TO-252 PNP Transistor
Published	Oct 19, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dis...
Datasheet	2SB1151 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to 2SD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -60 V -60 V -7 V -5...

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