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2N3906S

INCHANGE
Part Number 2N3906S
Manufacturer INCHANGE
Description PNP Transistor
Published Oct 19, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) APPLICATIONS ·Designe...
Datasheet PDF File 2N3906S PDF File

2N3906S
2N3906S


Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .
40V ) ·Low current ( max .
200mA ) APPLICATIONS ·Designed for high-speed switching ·Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Ptot Total Power Dissipation TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient 2N3906S VALUE -40 -40 -5 -200 300 -55~150 -55~150 UNIT V V V mA mW ℃ ℃ MAX 250 UNIT K/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=-10mA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC= -1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage IE= -10mA, IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA VBE(sat)1 base-emitter saturation voltage IC= -10mA; IB=-1mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO collector cut-off current VCB = -40 V,IE = 0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -0.
1 mA ; VCE= -1V hFE-2 DC Current Gain IC=- 1 mA ; VCE=-1V hFE-3 DC Current Gain IC= -10 mA ; VCE=-1V hFE-4 DC Current Gain IC= -50 mA ; VCE=-1V hFE-5 DC Current Gain IC=-100 mA ; VCE=-1V Cob Output Capacitance NF Noise Figure VCB=-5.
0Vdc, f=1.
0MHz, IE=0 VCE=-5.
0V, f=1.
0kHz, IC=100uA, RS=1.
0K 2N3906S MIN MAX UNIT -40 V -40 V -5 V -0.
25 V -0.
4 V -0.
85 V -0.
95 V -0.
1 μA -0.
1 μA 60 80 100 300 60 30 4.
5 pF 4.
0 dB isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N3906S isc website：www.
iscsemi.
com 3 is...


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