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2SK1968

Part Number	2SK1968
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 18, 2020
Detailed Description	isc N-Channel MOSFET Transistor 2SK1968 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V...
Datasheet	2SK1968 PDF File

Overview

isc N-Channel MOSFET Transistor 2SK1968 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 12 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 2SK1968 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10μA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 250μA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VDF Body to drain diode forward voltage IF = 12A, VGS...

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