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IRF9150

INCHANGE
Part Number IRF9150
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Oct 15, 2020
Detailed Description isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.15Ω ·100% avalanche tested ·Min...
Datasheet PDF File IRF9150 PDF File

IRF9150
IRF9150

Overview
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
15Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -25 IDM Drain Current-Single Pulsed -100 PD Total Dissipation 150 Tj Max.
Operating Junction Temperature ...


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