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SPP17N80C3

INCHANGE
Part Number SPP17N80C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 14, 2020
Detailed Description isc N-Channel MOSFET Transistor SPP17N80C3，ISPP17N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·E...
Datasheet PDF File SPP17N80C3 PDF File

SPP17N80C3
SPP17N80C3

Overview
isc N-Channel MOSFET Transistor SPP17N80C3，ISPP17N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 227 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃...


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