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SPD30N03S2L-20G

Infineon
Part Number SPD30N03S2L-20G
Manufacturer Infineon
Description Power-Transistor
Published Oct 14, 2020
Detailed Description OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product...
Datasheet PDF File SPD30N03S2L-20G PDF File

SPD30N03S2L-20G
SPD30N03S2L-20G

Overview
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant SPD30N03S2L-20 G Product Summary VDS 30 V RDS(on) 20 mΩ ID 30 A PG- TO252 -3 Type Package Marking SPD30N03S2L-20G PG- TO252 -3 2N03L20 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 30 30 120 70 6 6 ±20 60 -55.
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+175 55/175/56 Unit A mJ kV/µs V W °C Page 1 02-09-2008 Thermal Characteris...


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