DatasheetsPDF.com

MDP1922

Part Number	MDP1922
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Sw...
Datasheet	MDP1922 PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.
4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be suitable for DC/DC converters and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 97 IDM Drain Current-Single Pulsed 384 PD Total Dissipation @TC=25℃ 157 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAME...

Similar Datasheet

MDP1901 Single N-channel MOSFET - MagnaChip
MDP1921 Single N-channel MOSFET - MagnaChip
MDP1921 N-Channel MOSFET - INCHANGE
MDP1922 Single N-channel MOSFET - MagnaChip
MDP1922 N-Channel MOSFET - INCHANGE
MDP1922TH N-Channel MOSFET - INCHANGE
MDP1923 Single N-channel MOSFET - MagnaChip
MDP1923TH N-Channel MOSFET - INCHANGE
MDP1930 N-Channel MOSFET - MagnaChip
MDP1932 Single N-channel Trench MOSFET - MagnaChip

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)