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IRFR3410

Part Number	IRFR3410
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·Enhanc...
Datasheet	IRFR3410 PDF File

Overview

isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 125 PD Total Dissipation @TC=25℃ 110 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal ...

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