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IRFR220N

Part Number	IRFR220N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhan...
Datasheet	IRFR220N PDF File

Overview

isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 43 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal re...

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