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IRFB260N

Part Number	IRFB260N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFB260N，IIRFB260N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤40mΩ ·Enhance...
Datasheet	IRFB260N PDF File

Overview

isc N-Channel MOSFET Transistor IRFB260N，IIRFB260N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fully Characterized Avalanche Voltage and Current ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 220 PD Total Dissipation @TC=25℃ 380 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAME...

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