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IRF3415

Part Number	IRF3415
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRF3415，IIRF3415 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤42mΩ ·Enhancem...
Datasheet	IRF3415 PDF File

Overview

isc N-Channel MOSFET Transistor IRF3415，IIRF3415 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Combine with the fast switching speed and ruggedized device design ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 200 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS...

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