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IRF3256

Part Number	IRF3256
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRF3256,IIRF3256 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhance...
Datasheet	IRF3256 PDF File

Overview

isc N-Channel MOSFET Transistor IRF3256,IIRF3256 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.
4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched and High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 820 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 1...

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