N-Channel MOSFET - ART CHIP
Description
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.
25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.
z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling
TO-220AB
IRF711 IRF712 IRF713 MTP2N35 MTP2N40
Maximum Ratings
Symbol
VDSS VDGR VGS TJ,Tsgt TL
Characteristic
Drain to Source Voltage1 Drain to Gate Voltage1 RGS=20k Ω Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5 s
Rating IRF710/712 MTP2N40 400 400
±20 -55 to +150
275
Maximum On-State Characteristics
RDS(on) ID
Static Drain-to-Source On Resistance
Drain Current Continuous at Tc=25¥ Continuous at Tc=100¥ Pulsed
IRF710-711 3.
6
1.
5 1.
0 6.
0
Maximum On-State Characteristics
R ӨJC
Thermal Resistance
6.
4
Junction to Case
R ӨJA
Thermal Resistance,
80
Junction to Ambient
PD
Total Power Dissipation
20
at Tc=25¥
Notes
For information concerning connection diagram and package outline, refer to
Section 7.
Rating IRF711/713 MTP2N35 350 350
±20 -55 to +150
275
IRF712-713 5.
0
1.
4 0.
9 5.
0
6.
4
80
20
Unit V V
V ¥
¥
NTP2N35/40 Unit
5.
0
Ω
A 1.
3 0.
8 5.
0
2.
5
¥/W
80
¥/W
50
W
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IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.
25 A, 350-400V
Electrical Characteristics (Tc=25¥ unless otherwise noted)
Symbol
Characteristic
Min
Off Characteristics
V(BR)DSS
Drain Source Breakdown Voltage1
IRF710/712/MTP2N40
400
IRF711/713/MTP2N35
350
IDSS
Zero Gate Voltage Drain Current
Max
250 1000
Unit V
µA µA
IGSS
Gate-Body Leakage Current
±500
µA
On Characteristics
VGS(th)
Gate Threshold Voltage IRF710-713
V
2.
0
4.
0
MTP2N35/2N40
2.
0
...
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