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IRF1310N

Part Number	IRF1310N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 11, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRF1310N，IIRF1310N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.036Ω ·Enha...
Datasheet	IRF1310N PDF File

Overview

isc N-Channel MOSFET Transistor IRF1310N，IIRF1310N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
036Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 42 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 160 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYM...

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