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IRF200B211

INCHANGE
Part Number IRF200B211
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 11, 2020
Detailed Description isc N-Channel MOSFET Transistor IRF200B211，IIRF200B211 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤170mΩ ·E...
Datasheet PDF File IRF200B211 PDF File

IRF200B211
IRF200B211

Overview
isc N-Channel MOSFET Transistor IRF200B211，IIRF200B211 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤170mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous rectifier applications ·Resonant mode power supplies ·DC/DC and AC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 34 PD Total Dissipation @TC=25℃ 80 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ...


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