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IRF135B203

INCHANGE
Part Number IRF135B203
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 11, 2020
Detailed Description isc N-Channel MOSFET Transistor IRF135B203，IIRF135B203 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·En...
Datasheet PDF File IRF135B203 PDF File

IRF135B203
IRF135B203

Overview
isc N-Channel MOSFET Transistor IRF135B203，IIRF135B203 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.
4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 135 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 129 IDM Drain Current-Single Pulsed 512 PD Total Dissipation @TC=25℃ 441 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMB...


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