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IRF100B202

Part Number	IRF100B202
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 11, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRF100B202，IIRF100B202 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.6mΩ ·E...
Datasheet	IRF100B202 PDF File

Overview

isc N-Channel MOSFET Transistor IRF100B202，IIRF100B202 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.
6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 97 IDM Drain Current-Single Pulsed 380 PD Total Dissipation @TC=25℃ 221 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ...

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