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IPP110N20NA

Part Number	IPP110N20NA
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 10, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP110N20NA，IIPP110N20NA ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·E...
Datasheet	IPP110N20NA PDF File

Overview

isc N-Channel MOSFET Transistor IPP110N20NA，IIPP110N20NA ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 352 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTER...

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