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IPP100N08N3

Part Number	IPP100N08N3
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 10, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP100N08N3，IIPP100N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.7mΩ ·...
Datasheet	IPP100N08N3 PDF File

Overview

isc N-Channel MOSFET Transistor IPP100N08N3，IIPP100N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.
7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 70 IDM Drain Current-Single Pulsed 280 PD Total Dissipation @TC=25℃ 100 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ...

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