DatasheetsPDF.com

IPP083N10N5

INCHANGE
Part Number IPP083N10N5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP083N10N5，IIPP083N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.3mΩ ·...
Datasheet PDF File IPP083N10N5 PDF File

IPP083N10N5
IPP083N10N5

Overview
isc N-Channel MOSFET Transistor IPP083N10N5，IIPP083N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.
3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 73 IDM Drain Current-Single Pulsed 292 PD Total Dissipation @TC=25℃ 100 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)