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IPP076N12N3

INCHANGE
Part Number IPP076N12N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP076N12N3，IIPP076N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.6mΩ ·...
Datasheet PDF File IPP076N12N3 PDF File

IPP076N12N3
IPP076N12N3

Overview
isc N-Channel MOSFET Transistor IPP076N12N3，IIPP076N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.
6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 188 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
8 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP076N12N3，IIPP076N12N3 ELECTRICAL CHARACTERISTI...


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