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IPP070N08N3

Part Number	IPP070N08N3
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 10, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP070N08N3,IIPP070N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.7mΩ ...
Datasheet	IPP070N08N3 PDF File

Overview

isc N-Channel MOSFET Transistor IPP070N08N3,IIPP070N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.
7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync.
Rec.
·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 136 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A...

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