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IPP60R600E6

Part Number	IPP60R600E6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 10, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPP60R600E6，IIPP60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·...
Datasheet	IPP60R600E6 PDF File

Overview

isc N-Channel MOSFET Transistor IPP60R600E6，IIPP60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.
3 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25℃ 63 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V ...

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