N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
IPP60R160C6，IIPP60R160C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
16Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not
sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
23.
8
IDM
Drain Current-Single Pulsed
70
PD
Total Dissipation @TC=25℃
176
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.
71 62
UNIT ℃/W ℃/W
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
IPP60R160C6，IIPP60R160C6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.
25mA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =0.
75mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=11.
3A
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF=11.
3A; VGS = 0V
MIN TYP MAX UNIT
600
V
2.
5
3.
5
V
0.
16
Ω
0.
1
μA
1
μA
0.
9
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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