DatasheetsPDF.com

2SK3568

Part Number	2SK3568
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS ...
Datasheet	2SK3568 PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.
52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Regulator Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 48 PD Total Dissipation @TC=25℃ 40 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-ca...

Similar Datasheet

2SK350 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK350 Silicon N-Channel MOSFET - Hitachi
2SK3501 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK3501-01 N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3502-01MR N CHANNEL SILICON POWER MOSET - Fuji Electric
2SK3503 N-Channel MOSFET - Kexin
2SK3503 N-Channel MOSFET - NEC
2SK3504-01 N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3505 N-Channel MOSFET - INCHANGE
2SK3505-01MR N-Channel MOSFET - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)