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IRF1010NS

INCHANGE
Part Number IRF1010NS
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 6, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistan...
Datasheet PDF File IRF1010NS PDF File

IRF1010NS
IRF1010NS

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF1010NS ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 85 60 290 PD Total Dissipation 180 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
85 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010NS ELEC...


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