Isc N-Channel MOSFET Transistor
IPB60R099C6
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
37. 9 24
112
PD
Total Dissipation @TC=25℃
278
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0. 45 62
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET Transistor
IPB60R099C6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0. 25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=1. 21mA
2. 5
3. 5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=18. 1A
90
99
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
Drain-Source Leakage Current
VDS=600V; VGS= 0V;Tj=25℃ VDS=600V; VGS= 0V;Tj=150℃
Diode forward voltage
ISD=18. 1A, VGS = 0 V
±0. 1 μA
5 250
μA
0. 9
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our prod...
IPB60R099C6 PDF File
