isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous;Tc=25℃
Tc=100℃
Drain Current-Single Pulsed
±20 80 400
PD
Total Dissipation
94
Tj
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1. 6 40
UNIT ℃/W ℃/W
IPB039N04L
isc website：www. iscsemi. cn
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isc N-Channel MOSFET Transistor
IPB039N04L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0. 045mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=80A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS=±20V;VDS= 0V
VDS=40V; VGS= 0V;Tc=25℃ VDS=40V; VGS= 0V; Tc=125℃
ISD=80A, VGS = 0 V
MIN TYP MAX UNIT
40
V
1. 2
2. 0
V
3. 1
3. 9 mΩ
±0. 1 μA
1 100
μA
0. 92 1. 2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you in...
IPB039N04L PDF File
