DatasheetsPDF.com

2SJ477-01MR

INCHANGE
Part Number 2SJ477-01MR
Manufacturer INCHANGE
Published Oct 5, 2020
Description P-Channel MOSFET
Detailed Description Isc P-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charges ·Low gate input...
Datasheet PDF File 2SJ477-01MR PDF File

2SJ477-01MR
2SJ477-01MR


Overview
Isc P-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charges ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous -25 IDM Drain Current-Single Pulsed -100 PD Total Dissipation @TC=25℃ 40 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
13 62.
5 UNIT ℃/W ℃/W 2SJ477-01MR isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -1mA VGS(th) Gate Threshold Voltage VDS=-10V; ID=-1mA RDS(on) Drain-Source On-Resistance VGS= -10V; ID=-12.
5A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS=-60V; VGS= 0V VSDF Diode forward voltage ISD=-25A, VGS = 0 V 2SJ477-01MR MIN TYP MAX UNIT -60 V -1.
0 -2.
5 V 45 60 mΩ ±0.
1 μA -500 μA -3.
0 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be use...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)