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Part Number
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TK18A50D |
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Manufacturer
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INCHANGE |
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Description
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N-Channel MOSFET |
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Datasheet
|
 TK18A50D PDF File
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Overview
iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK18A50D，ITK18A50D
·FEATURES ·Low drain-source on-resistance:
RDS(on) = 0.
22Ω (typ.
) ·Enhancement mode:
Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
72
PD
Total Dissipation @TC=25℃
50
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.
5 62.
5
UNIT ℃/W ℃/W
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK18A50D，ITK18A50D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.
0mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=9A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=500V; VGS= 0V
VSDF
Diode forward voltage
IDR =18A, VGS = 0 V
MIN TYP MAX UNIT
500
V
2.
0
4.
0
V
220 270 mΩ
±1 μA
10
μA
1.
7
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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