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TK12A60U

INCHANGE
Part Number TK12A60U
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60U,ITK12A60U ·FEATURES ·Low drain-source on-resistance: R...
Datasheet PDF File TK12A60U PDF File

TK12A60U
TK12A60U


Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60U,ITK12A60U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
4Ω ·Low leakage current: IDSS = 100μA (max) (VDS = 600 V) ·Enhancement mode: Vth = 3.
0 to 5.
0V (VDS = 10 V, ID=1 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 35 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
57 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60U,ITK12A60U ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=6A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSDF Diode forward voltage IDR =12A, VGS = 0 V MIN TYP MAX UNIT 600 V 3.
0 5.
0 V 400 mΩ ±1 μA 100 μA 1.
7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aeros...


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