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IRF1010N

INCHANGE
Part Number IRF1010N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistanc...
Datasheet PDF File IRF1010N PDF File

IRF1010N
IRF1010N

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 85 IDM Drain Current-Single Pulsed 290 PD Total Dissipation @TC=25℃ 180 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
85 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF10...


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