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IRF60B217

INCHANGE
Part Number IRF60B217
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF60B217，IIRF60B217 ·FEATURES ·Static drain-source on-resistan...
Datasheet PDF File IRF60B217 PDF File

IRF60B217
IRF60B217

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF60B217，IIRF60B217 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.
0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 225 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMA...


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