N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R160C6 IIPW60R160C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤160mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
23.
8
IDM
Drain Current-Single Pulsed
70
PD
Total Dissipation @TC=25℃
176
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 0.
71 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R160C6 IIPW60R160C6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.
25mA
600
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.
75mA
2.
5
V
3.
5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=11.
3A
160 mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF=11.
3A, VGS = 0V
0.
1
μA
1
μA
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special ...
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